inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn darlington power transistor 2SD2256 description high dc current gain : h fe = 2000(min.)@ i c = 12a, v ce = 4v high collector-emitter breakdown voltage- : v (br)ceo = 120v(min) applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 25 a i cm collector current-peak 35 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn darlington power transistor 2SD2256 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 200ma, r be = 120 v v (br)cbo collector-base breakdown voltage i c = 0.1ma, i e = 0 120 v v (br)ceo collector-emitter breakdown voltage i c = 25ma, r be = 120 v v (br)ebo emitter-base breakdown voltage i e = 50ma, i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 12a ,i b = 24ma 2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 25a ,i b = 250ma 3.5 v v be (sat)-1 base-emitter saturation voltage i c = 12a ,i b = 24ma 3.0 v v be (sat)-2 base-emitter saturation voltage i c = 25a ,i b = 250ma 4.5 v i cbo collector cutoff current v cb = 100v, i e = 0 10 a i ceo collector cutoff current v ce = 100v, r be = 10 a h fe-1 dc current gain i c = 12a ; v ce = 4v 2000 20000 h fe-2 dc current gain i c = 25a ; v ce = 4v 500
|
